Controlled Growth of Graphene by Chemical Vapor Deposition

Graphene, firstly isolated in 2004, is a new type of carbon materials, which contains a singleor few-layered sheet of Sp2-bonded carbon atoms. This special atomic structure gives graphene rich physical properties and wide potential applications. It has excellent electrical, mechanical, thermal and optical properties and has wide applications in nano-electronic devices, transparent conductive films, power storage, composites materials et al. In our program, CVD method is used to fabricate large area and high quality graphene. The growth mechanism of graphene on different metal substrates is also investigated. In addition, we made a thorough study to its various performances. This film preparation provides a foundation for the application of graphene in photoelectric field in future. Introduction Graphene is a kind of magical materials which combines special 2D structure and diverse outstanding performance. The electron mobility of graphene is about 100 times faster than silicon, exhibiting the ballistic transport properties in submicron-scale at room temperature. Graphene is almost transparent with only 2.3% photoabsorption in a wide excitation range. Besides, graphene is about 100 times as strong as steel, excellent flexibility and ductility, up to 2600m2/g specific surface area. Its thermal conductivity is 10 times faster than copper. With these excellent physical properties, graphene has wide application in many fields. For instance, with its super-high electron mobility it can be used as high frequency transistor; with its high conductivity, high transmission and flexibility, it can be used as flexible transparent conductive films which is frequently used in touch screen and solar cell, etc; with its high strength and high thermal conductivity, it can improve the performance of traditional materials; and with its high specific surface area, it can be